| Part number | MRFG35003MT1 |
|---|---|
| Datasheet | MRFG35003MT1_Motorola.pdf |
| File Size | 362.14 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF Power Field Effect Transistor |
|
|
MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MRFG35003MT1 | RF Power Field Effect Transistors | Freescale Semiconductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRFG35003M6T1 | RF Power Field Effect Transistor |
| MRFG35010MT1 | RF Power Field Effect Transistor |
| MRF10005 | MICROWAVE POWER TRANSISTOR |
| MRF1002 | MICROWAVE POWER TRANSISTOR |
| MRF10031 | MICROWAVE POWER TRANSISTOR |
| MRF10070 | MICROWAVE POWER TRANSISTOR |
| MRF10120 | MICROWAVE POWER TRANSISTORS |
| MRF10150 | MICROWAVE POWER TRANSISTORS |
| MRF1015Mx | MICROWAVE POWER TRANSISTORS |
| MRF1030 | UHF POWER TRANSISTOR |
