MRFG35003MT1
MRFG35003MT1 is RF Power Field Effect Transistor manufactured by Motorola Semiconductor.
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
- Typical W- CDMA Performance:
- 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power
- 300 mWatt Power Gain
- 11.5 dB Efficiency
- 25%
3.5 GHz, 3 W, 12 V POWER FET GaAs PHEMT
Freescale Semiconductor, Inc...
- 3 Watts P1dB @...
