| Part number | MRFG35003MT1 |
|---|---|
| Datasheet | MRFG35003MT1_FreescaleSemiconductor.pdf |
| File Size | 128.28 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | RF Power Field Effect Transistors |
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Freescale Semiconductor Technical Data Available at http://.freescale./rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT RF Power Field Effect Transistors Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MRFG35003MT1 | RF Power Field Effect Transistor | Motorola |
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRFG35003N6T1 | RF Power Field Effect Transistor |
| MRFG35003NT1 | RF Power Field Effect Transistors |
| MRFG35002N6AT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6T1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005NT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35010 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35010ANT1 | RF Power Field Effect Transistor |
| MRFG35010AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35020AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
