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MRFG35003MT1 - RF Power Field Effect Transistors

Description

3.9 pF Chip Capacitor 0.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 39K pF Chip Capacitors 22 µF Tantalum Capacitors 1.0 pF Chip Capacitor 15.0 pF Chip Capacitor 4.7 nH Chip Inductor 8.2 nH Chip Inductor 75 W,

Features

  • that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other p.

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Datasheet Details

Part number MRFG35003MT1
Manufacturer Freescale Semiconductor
File Size 128.28 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRFG35003MT1 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT RF Power Field Effect Transistors Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 300 mWatt Power Gain — 11.5 dB Efficiency — 25% • 3 Watts P1dB @ 3.
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