MRFG35003MT1 Datasheet and Specifications PDF

The MRFG35003MT1 is a RF Power Field Effect Transistor.

Key Specifications

Max Operating Temp150 °C

MRFG35003MT1 Datasheet

MRFG35003MT1 Datasheet (Motorola Semiconductor)

Motorola Semiconductor

MRFG35003MT1 Datasheet Preview

7.5 pF Chip Capacitors, B Case 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors, A Case 100 pF Chip Capacitors, A Case 100 pF Chip Capacitors, B Case 1000 pF Chip Capacitors, B Case 3.9 µF Chip Cap.

C Derate above 25°C Gate
*Source Voltage RF Input Power Storage Temperature Range Channel Temperature(1) Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 8.1(2) 0.05(2)
*5 29
* 65 to +150 175
* 20 to +85 Unit Vdc Watts W/°C Vdc dBm °C °C °C Operating Case Temperature Range THERMAL CHARACTERISTICS Charac.

MRFG35003MT1 Datasheet (Freescale Semiconductor)

Freescale Semiconductor

MRFG35003MT1 Datasheet Preview

3.9 pF Chip Capacitor 0.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 39K pF Chip Capacitors 22 µF Tantalum Cap.

PCH (8.5 dB P/A @ 0.01% Probability) Output Power
* 350 mWatt Power Gain
* 12.5 dB Efficiency
* 26% MRFG35003NT1 MRFG35003MT1 BWA BWA 2.4 - 2.5 GHz VGG VDD BIAS BIAS RF INPUT MATC H RF OUTPUT MATC H MRFG35003NT1(MT1) BWA 2.4 - 2.5 GHz REFERENCE DESIGN Designed by: Monte Miller and Rick Hoope.

Price & Availability

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