The MRFG35003MT1 is a RF Power Field Effect Transistor.
| Max Operating Temp | 150 °C |
|---|
Motorola Semiconductor
7.5 pF Chip Capacitors, B Case 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors, A Case 100 pF Chip Capacitors, A Case 100 pF Chip Capacitors, B Case 1000 pF Chip Capacitors, B Case 3.9 µF Chip Cap.
C Derate above 25°C Gate
*Source Voltage RF Input Power Storage Temperature Range Channel Temperature(1) Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 8.1(2) 0.05(2)
*5 29
* 65 to +150 175
* 20 to +85 Unit Vdc Watts W/°C Vdc dBm °C °C °C
Operating Case Temperature Range
THERMAL CHARACTERISTICS
Charac.
Freescale Semiconductor
3.9 pF Chip Capacitor 0.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 39K pF Chip Capacitors 22 µF Tantalum Cap.
PCH (8.5 dB P/A @ 0.01% Probability) Output Power
* 350 mWatt Power Gain
* 12.5 dB Efficiency
* 26%
MRFG35003NT1 MRFG35003MT1 BWA
BWA 2.4 - 2.5 GHz
VGG
VDD
BIAS
BIAS
RF INPUT MATC H
RF OUTPUT MATC H
MRFG35003NT1(MT1) BWA 2.4 - 2.5 GHz REFERENCE DESIGN Designed by: Monte Miller and Rick Hoope.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Microchip USA | 154 | 50+ : 27.1840076 USD 100+ : 26.9884392 USD 1000+ : 26.7928708 USD 10000+ : 26.5973024 USD |
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| Suntronic | 4121 | - | View Offer |
| Lingto Electronic Ltd. | 49656 | - | View Offer |