MRFG35003NT1 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Available at http://.freescale./rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT RF Power Field Effect Transistors Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications. - Typical W - CDMA Performance: - 42 d Bc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 m A, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 d B P/A @ 0.01% Probability) Output Power - 300 m Watt Power Gain - 11.5 d B Efficiency - 25% - 3 Watts P1d B @ 3.55 GHz - Excellent Phase Linearity and Group Delay Characteristics - High Gain, High Efficiency and High Linearity - N Suffix Indicates Lead - Free Terminations Reference Design Characteristics - Typical Single - Channel W - CDMA Performance: - 45 d Bc ACPR, 2.45 GHz, 12 Volts, IDQ = 55 m A, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 d B P/A @ 0.01% Probability) Output Power - 350 m Watt Power Gain - 12.5 d B Efficiency - 26% MRFG35003NT1 MRFG35003MT1 BWA BWA 2.4 - 2.5 GHz BIAS BIAS RF INPUT MATC H RF OUTPUT MATC H MRFG35003NT1(MT1) BWA 2.4 - 2.5 GHz REFERENCE DESIGN Designed by: Monte Miller and Rick Hooper This reference design is designed to demonstrate the typical RF performance characteristics of the MRFG35003NT1(MT1) when applied for the 2.4 - 2.5 GHz W - CDMA frequency band. The reference design is tuned for the best tradeoff between good W - CDMA linearity and good power capability and...