This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MRFG35003NT1 |
|---|---|
| Datasheet | MRFG35003NT1 MRFG35003MT1 Datasheet (PDF) |
| File Size | 128.28 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | RF Power Field Effect Transistors |
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Freescale Semiconductor Technical Data Available at http://.freescale./rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT RF Power Field Effect Transistors Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications.
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRFG35003N6T1 | RF Power Field Effect Transistor |
| MRFG35003MT1 | RF Power Field Effect Transistors |
| MRFG35002N6AT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6T1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005NT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35010 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35010ANT1 | RF Power Field Effect Transistor |
| MRFG35010AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35020AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
