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MW4IC001NR4 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MW4IC001NR4 datasheet PDF. This datasheet also covers the MW4IC001MR4 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

Description

0.1 µF, 100 V Chip Capacitors 43 pF, 500 V Chip Capacitors 12 pF, 500 V Chip Capacitor 22 µF, 35 V Tantalum Chip Capacitor 4.7 pF, 500 V Chip Capacitor 0.6 - 4.5 pF, 500 V Variable Capacitors 2.7 pF, 500 V Chip Capacitor 3.3 pF, 500 V Chip Capacitor 5.6 nH Chip Inductor 10 nH Chip Inductor 100 W Chi

Features

  • (%), Gps, POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MW4IC001MR4_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MW4IC001MR4 RF LDMOS Wideband Integrated Power Amplifiers
MW4IC2230GNBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW4IC2230NBR1 RF LDMOS Wideband Integrated Power Amplifiers

Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA.
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