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MW6S010GNR1 - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Download the MW6S010GNR1 datasheet PDF. This datasheet also covers the MW6S010NR1 variant, as both devices belong to the same lateral n-channel broadband rf power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

Part Number 2743019447 100B470JP500X T491D226K035AS 13668221 CDR33BX104AKWS 272915L 100B240JP500X 100B6R8JP500X 100B7R5JP500X A04T- 5 CRCW12061001F100 Manufacturer Fair- Rite ATC Kemet Phillips Kemet Johanson ATC ATC ATC Coilcraft Vishay - Dale MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semico

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • On - Chip RF Feedback for Broadband Stability www. DataSheet4U. com.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MW6S010NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MW6S010GNR1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MW6S010GNR1. For precise diagrams, and layout, please refer to the original PDF.

Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed f...

View more extracted text
t Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain — 18 dB Drain Efficiency — 32% IMD — - 37 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability www.DataSheet4U.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Logo MW6S010GNR1 RF Power Field Effect Transistors NXP

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