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MW6S010GNR1 - RF Power Field Effect Transistors

Download the MW6S010GNR1 datasheet PDF. This datasheet also covers the MW6S010NR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Part Number 2743019447 C1, C6, C11, C20 47 pF Chip Capacitors ATC100B470JT500XT C2, C18, C19 C3, C16 C4, C15 22 μF, 35 V Tantalum C

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • On - Chip RF Feedback for Broadband Stability.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MW6S010N Rev. 5, 6/2009 MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MW6S010NR1-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MW6S010GNR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MW6S010GMR1 RF Power Field Effect Transistor
MW6S010MR1 RF Power Field Effect Transistor
MW6S010NR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.