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MW6S010GNR1 - RF Power Field Effect Transistors

This page provides the datasheet information for the MW6S010GNR1, a member of the MW6S010NR1 RF Power Field Effect Transistors family.

Description

Part Number 2743019447 C1, C6, C11, C20 47 pF Chip Capacitors ATC100B470JT500XT C2, C18, C19 C3, C16 C4, C15 22 μF, 35 V Tantalum C

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • On - Chip RF Feedback for Broadband Stability.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MW6S010N Rev. 5, 6/2009 MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V.

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Datasheet Details

Part number MW6S010GNR1
Manufacturer NXP
File Size 790.04 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MW6S010GNR1 Datasheet
Additional preview pages of the MW6S010GNR1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
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