MW6S010NR1 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two - Tone Performance at 960 MHz:.
MW6S010NR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Chip RF Feedback for Broadband Stability
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel
- 1500 MHz, 10 W, 28 V LATERAL N
- CHANNEL