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MW6S010NR1 - RF Power Field Effect Transistors

General Description

Part Number 2743019447 C1, C6, C11, C20 47 pF Chip Capacitors ATC100B470JT500XT C2, C18, C19 C3, C16 C4, C15 22 μF, 35 V Tantalum C

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • On - Chip RF Feedback for Broadband Stability.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MW6S010N Rev. 5, 6/2009 MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V.

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📁 Similar Datasheet

Part Number Description Manufacturer
MW6S010NR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.