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Fuji Electric

2SK3504-01 Datasheet Preview

2SK3504-01 Datasheet

N-CHANNEL SILICON POWER MOSFET

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2SK3504-01
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications
www.DataSheet4US.cwomitching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
500 V
Continuous drain current
ID
±16 A
Pulsed drain current
ID(puls]
±64 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
16 A
Maximum Avalanche Energy
EAS *1
212.2
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.02
225
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=1.52mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 500V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=7A VGS=10V
ID=7A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=7A
VGS=10V
RGS=10
VCC=250V
ID=14A
VGS=10V
L=1.52mH Tch=25°C
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
500 V
3.0 5.0 V
25 µA
250
10 100
nA
0.35 0.46
7 14
S
1600 2400
pF
160 240
7 10.5
18 27 ns
16 24
35 50
8 15
33 50 nC
12.5 19
10.5 16
16 A
1.00 1.50 V
0.65 µs
6.0 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.556 °C/W
62.0 °C/W
1




Fuji Electric

2SK3504-01 Datasheet Preview

2SK3504-01 Datasheet

N-CHANNEL SILICON POWER MOSFET

No Preview Available !

2SK3504-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
250
200
150
www.DataSheet4U.com 100
50
0
0 25 50 75 100 125 150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
30
20V
28
10V
26 8V 7.5V
24
22
20
18
16
14 7.0V
12
10
8
6 VGS=6.5V
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VDS [V]
22
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
ID [A]
10
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=50V
AS
500
450
I =7A
AS
400
350
I =10A
300 AS
250
200
I =16A
AS
150
100
50
0
0 25 50 75 100 125 150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
1.0
0.9
VGS=6.5V
0.8
7.0V
7.5V
0.7
0.6
0.5
8V
10V
20V
0.4
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30
ID [A]
2


Part Number 2SK3504-01
Description N-CHANNEL SILICON POWER MOSFET
Maker Fuji Electric
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2SK3504-01 Datasheet PDF






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