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2SK3535-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Applications
for Switching
Foot Print Pattern
Absolute Maximum Ratings at Tc=25°C
( unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR *2 EAS *1 dV DS /dt dV/dt *3 PD Tch Tstg Ratings 250 220 ±37 ±3.4 *4 ±148 ±30 37 251.9 20 5 2.
2SK3535-01 Datasheet
