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2SK3581-01S - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3581-01S datasheet PDF. This datasheet also covers the 2SK3581-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3581-01L_FujiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 500 A ID ±16 A ID(puls] ±64 V VGS ±30 A IAR *2 16 mJ EAS *1 212.2 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 225 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=1.
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