Datasheet Details
| Part number | FMV20N60S1 |
|---|---|
| Manufacturer | Fuji Electric |
| File Size | 682.44 KB |
| Description | N-CHANNEL SILICON POWER MOSFET |
| Datasheet | FMV20N60S1_FujiElectric.pdf |
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Overview: FMV20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power.
| Part number | FMV20N60S1 |
|---|---|
| Manufacturer | Fuji Electric |
| File Size | 682.44 KB |
| Description | N-CHANNEL SILICON POWER MOSFET |
| Datasheet | FMV20N60S1_FujiElectric.pdf |
|
|
|
Drain-Source Voltage Continuous Drain Current Symbol VDS VDSX ID Pulsed Drain Current IDP Gate-Source Voltage VGS Characteristics 600 600 ±20 ±12.6 ±60 ±30 Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.6 Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Isolation Voltage Viso Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=2A, L=216mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C.
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| Brand Logo | Part Number | Description | Manufacturer |
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