FMV20N60S1 Datasheet and Specifications PDF

The FMV20N60S1 is a N-CHANNEL SILICON POWER MOSFET.

Part NumberFMV20N60S1 Datasheet
ManufacturerFuji Electric
Overview Drain-Source Voltage Continuous Drain Current Symbol VDS VDSX ID Pulsed Drain Current IDP Gate-Source Voltage VGS Characteristics 600 600 ±20 ±12.6 ±60 ±30 Repetitive and Non-Repetitive Maximum. Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-220F(SLS) Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Maximum Ratings and Characteristics Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Vol.
Part NumberFMV20N60S1 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Low on-resistance: RDS(on) ≤ 0.19Ω (max) ·Low switching loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliabl.
*Low on-resistance: RDS(on) ≤ 0.19Ω (max)
*Low switching loss
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*UPS (Uninterruptible Power Supply)
*Power conditioner system
*Power supply
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.

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