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FMW20N60S1HF Datasheet N-channel Silicon Power MOSFET

Manufacturer: Fuji Electric

Overview: www.DataSheet.co.kr http://www.fujielectric.com/products/semiconductor/ FMW20N60S1HF Super J-MOS.

General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Note *1 : Limited by maximum channel temperature.

Note *2 : Tch ≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch =25°C, IAS=2A, L=216mH, VDD =60V, RG =50Ω, See Fig.1 and Fig.2 E AS limited by maximum channel temperature and avalanche current.

Note *4 : I F ≤-I D, -di/dt=100A/μs, VDD ≤400V, Tch ≤150°C.

Key Features

  • Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-247-P2 Equivalent circuit schematic.

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