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YG811S04R - Silicon Diode

Features

  • Low VF Super high speed switching. High reliability by planer design. 15±0.3 0.6±0.2 2.7±0.2 5.08±0.4.

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Datasheet preview – YG811S04R

Datasheet Details

Part number YG811S04R
Manufacturer Fuji Electric
File Size 73.22 KB
Description Silicon Diode
Datasheet download datasheet YG811S04R Datasheet
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www.DataSheet4U.com YG811S04R SCHOTTKY BARRIER DIODE (40V / 5A TO-22OF15) Outline Drawings 10.5±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 3.7±0.2 1.2±0.2 13Min 0.7±0.2 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 0.6±0.2 2.7±0.2 5.08±0.4 Applications High speed power switching. JEDEC EIAJ SC-67 Connection Diagram 1 3 Maximum Ratings and Characteristics Absolute Maximum Ratings Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Conditions Rating 40 Unit V V V A A °C °C tw=500ns, duty=1/40 Terminals to Case, AC. 1min.
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