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YG812S04R
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Isolating voltage Average forward current Non-repetitive forward surge current Operating junction temperature Storage temperature Symbols VRSM VRRM Viso IFAV IFSM Tj Tstg Conditions tw=500ns, duty=1/40 Terminals-to-case, AC.1min 50Hz Square wave duty =1/2 Tc = 124˚C Sine wave, 10ms 1shot Ratings 48 45 1500 10 120 150 -40 to +150
FUJI Diode
Units V V V A A ˚C ˚C
Electrical characteristics
Item Forward voltage Reverse current Thermal resistance
(at Ta=25˚C unless otherwise specified.)
Symbols VF IR Rth(j-c) IF =10 A VR =VRRM Junction to case Conditions Maximum 0.6 2.
YG812S04R Datasheet
