YG811S04R
YG811S04R is Silicon Diode manufactured by Fuji Electric.
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SCHOTTKY BARRIER DIODE
(40V / 5A TO-22OF15)
Outline Drawings
10.5±0.5 ø3.2
+0.2 -0.1
4.5±0.2 2.7±0.2 6.3
2.7±0.2 3.7±0.2
1.2±0.2 13Min 0.7±0.2
Features
Low VF Super high speed switching. High reliability by planer design.
15±0.3
0.6±0.2 2.7±0.2
5.08±0.4
Applications
High speed power switching.
JEDEC EIAJ
SC-67
Connection Diagram
1 3
Maximum Ratings and Characteristics...
