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FLU10XM - L-Band Medium & High Power GaAs FET

General Description

The FLU10XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range.

This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications.

Key Features

  • High Output Power: P1dB=29.5dBm (Typ. ).
  • High Gain: G1dB=14.5dB (Typ. ).
  • High PAE: ηadd=47% (Typ. ).
  • Hermetic Metal/Ceramic (SMT) Package.
  • Tape and Reel Available FLU10XM L-Band Medium & High Power GaAs FET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FEATURES • High Output Power: P1dB=29.5dBm (Typ.) • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU10XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.