FEATURES
• High Output Power: P1dB=29.5dBm (Typ.)
• High Gain: G1dB=14.5dB (Typ.)
• High PAE: ηadd=47% (Typ.)
• Hermetic Metal/Ceramic (SMT) Package
• Tape and Reel Available
FLU10XM
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU10XM is a GaAs FET designed for base station applications in the
PCN/PCS frequency range. This is a new product series that uses a surface
mount package that has been optimized for high volume cost driven applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistence of 400Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
4.16
-65 to +175
+175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Unit
Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS=0V
VDS = 5V, IDS=200mA
- 300 450
- 150 -
mA
mS
Pinch-Off Voltage
Vp
VDS = 5V, IDS=15mA
-1.0 -2.0 -3.5
V
Gate-Source Breakdown Voltage VGSO IGS = -15µA
-5 -
-
V
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power Added Efficiency
P1dB
G1dB
ηadd
VDS = 10V
f=2.0 GHz
IDS=0.6IDSS
Thermal Resistance
Rth Channel to Case
Case Style: XM
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
28.5
13.5
-
-
29.5 -
dBm
14.5 -
dB
47 -
%
25 36
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1
