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MB85R4M2T - Memory FRAM

General Description

The MB85R4M2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.

Key Features

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Full PDF Text Transcription for MB85R4M2T (Reference)

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FUJITSU SEMICONDUCTOR DATA SHEET DS501-00024-0v01-E Memory FRAM 4 M (256 K × 16) Bit MB85R4M2T  DESCRIPTIONS The MB85R4M2T is an FRAM (Ferroelectric Random Access Memory...

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CRIPTIONS The MB85R4M2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4M2T is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4M2T can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R4M2T uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

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