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  Fujitsu Electronic Components Datasheet  

MB85R4M2T Datasheet

Memory FRAM

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FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
DS501-00024-0v01-E
4 M (256 K × 16) Bit
MB85R4M2T
DESCRIPTIONS
The MB85R4M2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words
× 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
technologies.
The MB85R4M2T is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R4M2T can be used for 1013 read/write operations, which is a
significant improvement over the number of read and write operations supported by Flash memory and
E2PROM. The MB85R4M2T uses a pseudo-SRAM interface that is compatible with conventional
asynchronous SRAM.
FEATURES
• Bit configuration
• LB and UB data byte control
• Read/write endurance
• Data retention
• Operating power supply voltage
• Low power operation
: 262,144 words × 16 bits
: Available Configuration of 524,288 words × 8 bits
: 1013 times / 16 bits
: 10 years ( + 85 °C)
: 1.8 V to 3.6 V
: Operating power supply current 20 mA (Max)
Standby current 150 μA (Max)
Sleep current 20 μA (Max)
• Operation ambient temperature range : − 40 °C to + 85 °C
• Package
: 44-pin plastic TSOP (FPT-44P-M34)
RoHS compliant
Copyright©2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.11


  Fujitsu Electronic Components Datasheet  

MB85R4M2T Datasheet

Memory FRAM

No Preview Available !

MB85R4M2T
PIN ASSIGNMENTS
A4
A3
A2
A1
A0
/ CE
I/ O0
I/ O1
I/ O2
I/ O3
VDD
VSS
I/ O4
I/ O5
I/ O6
I/ O7
/ WE
A17
A16
A15
A14
A13
(TOP VIEW)
1 44
2 43
3 42
4 41
5 40
6 39
7 38
8 37
9 36
10 35
11 34
12 33
13 32
14 31
15 30
16 29
17 28
18 27
19 26
20 25
21 24
22 23
A5
A6
A7
/ OE
/ UB
/ LB
I/ O15
I/ O14
I/ O13
I/ O12
VSS
VDD
I/ O11
I/ O10
I/ O9
I/ O8
/ ZZ
A8
A9
A10
A11
A12
FPT- 44P- M34
2 DS501-00024-0v01-E


Part Number MB85R4M2T
Description Memory FRAM
Maker Fujitsu
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MB85R4M2T Datasheet PDF






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