Description
The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
Features
- Bit configuration
: 524,288 words × 8 bits.
- Read/write endurance
: 1010 times / byte.
- Data retention
: 10 years ( + 55 °C), 55 years ( + 35 °C).
- Operating power supply voltage
: 3.0 V to 3.6 V.
- Low power operation
: Operating power supply current 15 mA (Typ)
Standby current 50 μA (T.
MB85R4001A Datasheet
