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MB85R4001A - Memory FRAM

General Description

The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.

Key Features

  • Bit configuration : 524,288 words × 8 bits.
  • Read/write endurance : 1010 times / byte.
  • Data retention : 10 years ( + 55 °C), 55 years ( + 35 °C).
  • Operating power supply voltage : 3.0 V to 3.6 V.
  • Low power operation : Operating power supply current 15 mA (Typ) Standby current 50 μA (T.

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM 4 M Bit (512 K × 8) MB85R4001A DS501-00005-5v1-E ■ DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R4001A uses a pseudo-SRAM interface.