Datasheet Details
| Part number | MB85R2001 |
|---|---|
| Manufacturer | Fujitsu Semiconductor Limited |
| File Size | 149.85 KB |
| Description | Memory FRAM CMOS |
| Datasheet | MB85R2001_Fujitsu.pdf |
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Overview: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit (256 K × 8).
| Part number | MB85R2001 |
|---|---|
| Manufacturer | Fujitsu Semiconductor Limited |
| File Size | 149.85 KB |
| Description | Memory FRAM CMOS |
| Datasheet | MB85R2001_Fujitsu.pdf |
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S The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R2001 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
| Part Number | Description |
|---|---|
| MB85R2002 | Memory FRAM CMOS |
| MB85R256F | Memory FRAM |
| MB85R1001A | 1 M Bit (128 K x 8) |
| MB85R1002A | 1 M Bit (64 K x 16) |
| MB85R4001A | Memory FRAM |
| MB85R4002A | Memory FRAM |
| MB85R4M2T | Memory FRAM |
| MB85RC04V | 4K-bit I2C Memory FRAM |
| MB85RC128 | 128 K (16 K x 8) Bit I2C |
| MB85RC16 | 16 K (2 K x 8) Bit I2C |