MB85R2001 Description
The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R2001 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R2001 uses a pseudo-SRAM interface that is patible with conventional asynchronous SRAM.
MB85R2001 Key Features
- Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package
- 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1)
- PIN ASSIGNMENTS
- PIN DESCRIPTIONS
- BLOCK DIAGRAM
- Address Latch
- I/O8 to I/O1
- FUNCTION TRUTH TABLE