Description
The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
Features
- Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 262,144 words × 8 bits : 1010 times/bit : 3.0 V to 3.6 V :.
- 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1)
Copyright©2007-2009.
MB85R2001 Datasheet
