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MB85R2002 Datasheet Memory Fram CMOS

Manufacturer: Fujitsu Semiconductor Limited

Overview: FUJITSU MICROELECTRONICS DATA SHEET DS05-13108-4E Memory FRAM CMOS 2 M Bit (128 K × 16).

General Description

S The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

The MB85R2002 is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R2002 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

Key Features

  • Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention LB and UB data byte control Package : 131,072 words × 16 bits : 1010 times/bit : 3.0 V to 3.6 V :.
  • 40 °C to +85 °C : 10 years (+55 °C) : 48-pin plastic TSOP (1) Copyright©2007-2009.

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MB85R2001 Memory FRAM CMOS
MB85R256F Memory FRAM
MB85R1001A 1 M Bit (128 K x 8)
MB85R1002A 1 M Bit (64 K x 16)
MB85R4001A Memory FRAM
MB85R4002A Memory FRAM
MB85R4M2T Memory FRAM
MB85RC04V 4K-bit I2C Memory FRAM
MB85RC128 128 K (16 K x 8) Bit I2C
MB85RC16 16 K (2 K x 8) Bit I2C

MB85R2002 Distributor