MB85R256F Description
The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R256F uses a pseudo - SRAM interface patible with conventional asynchronous SRAM.
MB85R256F Key Features
- Bit configuration : 32,768 words × 8 bits
- High endurance 10 Billion Read/writes
- Peripheral circuit CMOS construction
- Operating power supply voltage : 2.7 V to 3.6 V
- Operating temperature range : -40 °C to +85 °C
- Data re