Fujitsu MB85R256F
The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.| Part No. | MB85R256F |
|---|---|
| Datasheet | MB85R256F Download |
| Manufacturer |  Fujitsu |
| Description | Memory FRAM |
| Buy | Stock & Price |
FEATURES
● Bit configuration : 32,768 words × 8 bits● High endurance 10 Billion Read/writes
● Peripheral circuit CMOS construction
● Operating power supply voltage : 2.7 V to 3.6 V
● Operating temperature range : −40 °C to +85 °C
● Data re
