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MB85R256F - Memory FRAM

General Description

The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Key Features

  • Bit configuration : 32,768 words × 8 bits.
  • High endurance 10 Billion Read/writes.
  • Peripheral circuit CMOS construction.
  • Operating power supply voltage : 2.7 V to 3.6 V.
  • Operating temperature range :.
  • 40 °C to +85 °C.
  • Data re.

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Full PDF Text Transcription (Reference)

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00011-1v0-E 256 K (32 K × 8) Bit MB85R256F ■ DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R256F uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.