MB85R256H Datasheet | Fujitsu Semiconductor Limited

.. FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K (32 K × 8) Bit - DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R256H is able to retain data without back-up battery. The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability. The MB85R256H uses a pseudo - SRAM interface patible with conventional asynchronous SRAM. -...