MB85R256H datasheet by Fujitsu Semiconductor Limited.
| Part number | MB85R256H |
|---|---|
| Datasheet | MB85R256H_FujitsuMediaDevices.pdf |
| File Size | 304.13 KB |
| Manufacturer | Fujitsu Semiconductor Limited |
| Description | Memory FRAM CMOS 256 K (32 K X 8) Bit |
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Unlike SRAM, MB85R256H is able to retain data without back-up battery. The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability. The MB85R256H uses a pseudo - SRAM interface patible with conventional asynchronous SRAM.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MB85R256 | Memory FRAM | Fuji Electric |
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MB85R256F | Memory FRAM | Fujitsu |
View all Fujitsu Semiconductor Limited datasheets
| Part Number | Description |
|---|---|
| MB85R1001 | 1 M Bit (128 K X 8) |
| MB85R1002 | Memory FRAM |
| MB81C4251 | 1M-Bit Dual Port CMOS DRAM |
| MB81C4253 | 1M-Bit Dual Port CMOS DRAM |
| MB81C4256A | 256K x 4-Bit Fast Page Mode Low Power DRAM |
| MB81C81A | CMOS 256K-BIT HIGH-SPEED SRAM |
| MB81C84A | CMOS 256K-BIT HIGH-SPEED SRAM |
| MB81C86 | CMOS 256K-BIT HIGH-SPEED SRAM |
| MB81F643242C | 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM |
| MB82D01171A | 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory |
