MB85R256 Datasheet | Fuji Electric

.. FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-3E Memory FRAM CMOS 256 K (32 K × 8) Bit MB85R256 s DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM MB85R256 is able to retain data without back-up battery. The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability. The MB85R256 uses a pseudo - SRAM interface patible with conventional asynchronous SRAM. s...