Fujitsu MB85R1001A
The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.| Part No. | MB85R1001A |
|---|---|
| Datasheet | MB85R1001A Download |
| Manufacturer |  Fujitsu |
| Description | 1 M Bit (128 K x 8) |
| Buy | Stock & Price |
FEATURES
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● Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 131,072 words × 8 bits : 1010 times : 3.0 V to 3.6 V : − 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1) Copyright©2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2011.1 MB85R1001A
● PIN ASSIGNMENTS (TOP VIEW) A11 A9 NC A8 A13 WE CE2 A15 NC VDD NC NC VSS NC NC VDD NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 OE NC VSS A10 CE1 NC I/O8 I/O7 I/O6 I/O5 I/O4 VDD NC I/O3 I/O2 I/O1 NC NC NC A0 A1 VSS A2 A3 (FPT-48P-M48)
● PIN DESCRIPTIONS Pin Number 1, 2, 4, 5, 8, 18 to 26, 28, 29, 45 33 to 35, 38 to 42 44 7 6 48 10, 16, 37 13, 27, 46 3, 9, 11, 12, 14, 15, 17, 30 to 32, 36, 43, 47 Pin Name A0 to A16 I/O1 to I/O8 CE1 CE2 WE OE VDD VSS NC Functional
DESCRIPTION
Address Input pins Data Input/Output pins Chip Enable...
