MB85R1001A Datasheet | Fujitsu Semiconductor Limited

FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-0v01-E Memory FRAM CMOS 1 M Bit (128 K × 8) - DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R1001A uses a pseudo-SRAM interface that is patible with...