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MB85R1001A - 1 M Bit (128 K x 8)

General Description

The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Key Features

  • Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 131,072 words × 8 bits : 1010 times : 3.0 V to 3.6 V :.
  • 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1) Copyright©2011.

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Full PDF Text Transcription (Reference)

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FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-0v01-E Memory FRAM CMOS 1 M Bit (128 K × 8) MB85R1001A ■ DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.