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MB85R1001 - 1 M Bit (128 K X 8)

General Description

The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Key Features

  • Bit configuration : 131,072 words x 8bits Read/write endurance : 1010 times Operating power supply voltage : 3.0 V to 3.6 V Operating temperature range : -20 °C to +85 °C 48-pin, TSOP (1) plastic package.

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-2E Memory FRAM CMOS 1 M Bit (128 K × 8) MB85R1001 ■ DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1001 is able to retain data without back-up battery. The memory cells used for the MB85R1001 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance. The MB85R1001 used a pseudo - SRAM interface compatible with conventional asynchronous SRAM.