MB85R1001 Datasheet | Fujitsu Semiconductor Limited

.. FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-2E Memory FRAM CMOS 1 M Bit (128 K × 8) - DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1001 is able to retain data without back-up battery. The memory cells used for the MB85R1001 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance. The MB85R1001 used a pseudo - SRAM interface patible with conventional asynchronous SRAM. -...