MB85R1001 Description
Unlike SRAM, MB85R1001 is able to retain data without back-up battery. The memory cells used for the MB85R1001 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance. The MB85R1001 used a pseudo - SRAM interface patible with conventional asynchronous SRAM.
MB85R1001 Key Features
- PACKAGE
- PIN ASSIGNMENTS
- PIN DESCRIPTIONS
- BLOCK DIAGRAM
- Address Latch. Row Dec. Ferro Capacitor Cell
- to I/O1 intCE2 intOE intWE intCE2 I/O1 to I/O8
- FUNCTION TRUTH TABLE