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MB85R1001

Manufacturer: Fujitsu Semiconductor Limited

MB85R1001 datasheet by Fujitsu Semiconductor Limited.

MB85R1001 datasheet preview

MB85R1001 Datasheet Details

Part number MB85R1001
Datasheet MB85R1001_FujitsuMediaDevices.pdf
File Size 163.00 KB
Manufacturer Fujitsu Semiconductor Limited
Description 1 M Bit (128 K X 8)
MB85R1001 page 2 MB85R1001 page 3

MB85R1001 Overview

Unlike SRAM, MB85R1001 is able to retain data without back-up battery. The memory cells used for the MB85R1001 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance. The MB85R1001 used a pseudo - SRAM interface patible with conventional asynchronous SRAM.

MB85R1001 Key Features

  • PACKAGE
  • PIN ASSIGNMENTS
  • PIN DESCRIPTIONS
  • BLOCK DIAGRAM
  • Address Latch. Row Dec. Ferro Capacitor Cell
  • to I/O1 intCE2 intOE intWE intCE2 I/O1 to I/O8
  • FUNCTION TRUTH TABLE

MB85R1001A from other manufacturers

View MB85R1001A datasheet index

Brand Logo Part Number Description Other Manufacturers
Fujitsu Logo MB85R1001A 1 M Bit (128 K x 8) Fujitsu
Fujitsu Semiconductor Limited logo - Manufacturer

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MB85R1001 Distributor

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