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MB82DBS04163C - MEMORY Mobile FCRAMTM CMOS 64 M Bit

Description

Mobile Phone Application Specific Memory The FUJITSU MB82DBS04163C is a CMOS Fast Cycle Random Access Memory (FCRAM

) with asynchronous Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format.

Features

  • Asynchronous SRAM Interface Fast Access Time : tCE = 70 ns Max 8 words Page Access Capability : tPAA = 20 ns Max Burst Read/Write Access Capability : tAC = 10 ns Max Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V Wide Operating Temperature : TA = -30 °C to +85 °C Byte Control by LB and UB Low-Power Consumption : IDDA1 = 35 mA Max IDDS1 = 90 µA Max (TA ≤ + 40°C ).
  • Various Power Down mode : Sleep 8 M-bit.

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Other Datasheets by Fujitsu Semiconductor Limited

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MB82D01171A 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
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MB82DP04183C 64M Bit (4 M word X 16 bit) Mobile Phone Application Specific Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-11432-1E MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) MB82DBS04163C-70L ■ DESCRIPTION Mobile Phone Application Specific Memory The FUJITSU MB82DBS04163C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format. MB82DBS04163C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in comparison to regular SRAM. The MB82DBS04163C adopts asynchronous page mode and synchronous burst mode for fast memory access as user configurable options. This MB82DBS04163C is suited for mobile applications such as Cellular Handset and PDA.
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