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MB82DS01181E - Mobile Phone Application Specific Memory

Description

MB82DS01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format.

Features

  • Asynchronous SRAM Interface 1 M word × 16-bit Organization Low-voltage Operating Conditions Wide Operating Temperature Read/Write Cycle Time Fast Random Access Time Active current Standby current Power down current Byte Control Shipping Form : VDD = +1.7 V to +1.95 V : TA =.
  • 30 °C to +85 °C : tRC = tWC = 80 ns Min : tAA = tCE = 70 ns Max : IDDA1 = 20 mA Max : IDDS1 = 100 µA Max.

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Other Datasheets by Fujitsu Semiconductor Limited

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MB82D01171A 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-11434-1E MEMORY Mobile FCRAMTM CMOS 16 Mbit (1 M word × 16 bit) MB82DS01181E-70L-A ■ DESCRIPTION Mobile Phone Application Specific Memory MB82DS01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. MB82DS01181E is suited for mobile applications such as Cellular Handset and PDA. Note: FCRAM is a trademark of Fujitsu Limited, Japan.
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