MB84VB2001 Description
FUJITSU SEMICONDUCTOR DATA SHEET DS05-50102-2E MCP (Multi-Chip Package) FLASH MEMORY CMOS 8M (× 8/× 16) FLASH MEMORY & 8M (× 8/× 16) FLASH MEMORY MB84VB2000-10/MB84VB2001-10.
MB84VB2001 Key Features
- Contain 2 chips of MBM29LV800A, and each chip have separate CE
- Power supply voltage of 2.7 to 3.6 V
- High performance 100 ns maximum access time
- Operating Temperature -40 to +85°C
- Minimum 100,000 write/erase cycles
- Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes × 2 chips Any bination of
- Boot Code Sector Architecture MB84VB2000: Top sector MB84VB2001: Bottom sector
- Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
- Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address
- Data Polling and Toggle Bit feature for detection of program or erase cycle pletion