• Part: MB84VB2001
  • Description: 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
  • Manufacturer: Fujitsu Semiconductor Limited
  • Size: 314.39 KB
Download MB84VB2001 Datasheet PDF
Fujitsu Semiconductor Limited
MB84VB2001
FEATURES - Contain 2 chips of MBM29LV800A, and each chip have separate CE. - Power supply voltage of 2.7 to 3.6 V - High performance 100 ns maximum access time - Operating Temperature - 40 to +85°C - Minimum 100,000 write/erase cycles - Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes × 2 chips Any bination of sectors can be concurrently erased. Also supports full chip erase. - Boot Code Sector Architecture MB84VB2000: Top sector MB84VB2001: Bottom sector - Embedded Erase TM Algorithms Automatically pre-programs and erases the chip or any sector - Embedded Program TM Algorithms Automatically writes and verifies data at specified address - Data Polling and Toggle Bit feature for detection of program or erase cycle pletion - Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle pletion - Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. - Low VCC write inhibit ≤ 2.5...