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MB84VB2000 - (MB84VB2000 / MB84VB2001) 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY

General Description

Table 4 Sector Address Tables (MB84VB2000) Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 A18 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 A17 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 A16 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 A15 0 1 0 1 0 1 0 1 0 1 0 1 0 1

Key Features

  • Contain 2 chips of MBM29LV800A, and each chip have separate CE.
  • Power supply voltage of 2.7 to 3.6 V.
  • High performance 100 ns maximum access time.
  • Operating Temperature.
  • 40 to +85°C.
  • Minimum 100,000 write/erase cycles.
  • Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes × 2 chips Any combination of sectors can be concurrently erased. Also supports full chip erase.
  • Boot Code Sector.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB84VB2001 (MB84VB2000 / MB84VB2001) 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
MB84VA2000 (MB84VA2000 / MB84VA2001) 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM
MB84VA2002 (MB84VA2002 / MB84VA2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VA2003 (MB84VA2002 / MB84VA2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VA2004 (MB84VA2004 / MB84VA2005) 8M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-50102-2E MCP (Multi-Chip Package) FLASH MEMORY CMOS 8M (× 8/× 16) FLASH MEMORY & 8M (× 8/× 16) FLASH MEMORY MB84VB2000-10/MB84VB2001-10 s FEATURES • Contain 2 chips of MBM29LV800A, and each chip have separate CE. • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –40 to +85°C • Minimum 100,000 write/erase cycles • Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes × 2 chips Any combination of sectors can be concurrently erased. Also supports full chip erase.