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MB84VB2001 - (MB84VB2000 / MB84VB2001) 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY

Download the MB84VB2001 datasheet PDF. This datasheet also covers the MB84VB2000 variant, as both devices belong to the same (mb84vb2000 / mb84vb2001) 8m (x 8/x 16) flash memory & 8m (x 8/x 16) flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

Table 4 Sector Address Tables (MB84VB2000) Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 A18 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 A17 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 A16 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 A15 0 1 0 1 0 1 0 1 0 1 0 1 0 1

Key Features

  • Contain 2 chips of MBM29LV800A, and each chip have separate CE.
  • Power supply voltage of 2.7 to 3.6 V.
  • High performance 100 ns maximum access time.
  • Operating Temperature.
  • 40 to +85°C.
  • Minimum 100,000 write/erase cycles.
  • Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes × 2 chips Any combination of sectors can be concurrently erased. Also supports full chip erase.
  • Boot Code Sector.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MB84VB2000_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB84VB2000 (MB84VB2000 / MB84VB2001) 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
MB84VA2000 (MB84VA2000 / MB84VA2001) 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM
MB84VA2002 (MB84VA2002 / MB84VA2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VA2003 (MB84VA2002 / MB84VA2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VA2004 (MB84VA2004 / MB84VA2005) 8M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET DS05-50102-2E MCP (Multi-Chip Package) FLASH MEMORY CMOS 8M (× 8/× 16) FLASH MEMORY & 8M (× 8/× 16) FLASH MEMORY MB84VB2000-10/MB84VB2001-10 s FEATURES • Contain 2 chips of MBM29LV800A, and each chip have separate CE. • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –40 to +85°C • Minimum 100,000 write/erase cycles • Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes × 2 chips Any combination of sectors can be concurrently erased. Also supports full chip erase.