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MB84VD2118xA Datasheet (MB84VD2118xA / MB84VD2119xA) 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM

Manufacturer: Fujitsu Semiconductor Limited

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General Description

”) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Minimum 100,000 write/erase cycles • Sector erase architecture Eight 4 K words and thirty one 32 K words.

Any combination of sectors can be concurrently erased.

Also supports full chip erase.

Overview

( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50202-3E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 16M ( × 8/ × 16) FLASH MEMORY & 4M ( × 8/ × 16) STATIC RAM.

Key Features

  • Power supply voltage of 2.7 V to 3.6 V.
  • High performance 85 ns maximum access time.
  • Operating Temperature.
  • 25 °C to +85 °C.
  • Package 69-ball FBGA, 56-pin TSOP(I) (Continued) s.

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