Datasheet Details
| Part number | MB85R1001 |
|---|---|
| Manufacturer | Fujitsu Semiconductor Limited |
| File Size | 163.00 KB |
| Description | 1 M Bit (128 K X 8) |
| Download | MB85R1001 Download (PDF) |
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| Part number | MB85R1001 |
|---|---|
| Manufacturer | Fujitsu Semiconductor Limited |
| File Size | 163.00 KB |
| Description | 1 M Bit (128 K X 8) |
| Download | MB85R1001 Download (PDF) |
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S The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, MB85R1001 is able to retain data without back-up battery.
The memory cells used for the MB85R1001 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance.
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-2E Memory FRAM CMOS 1 M Bit (128 K × 8).
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MB85R1001A | 1 M Bit (128 K x 8) | Fujitsu |
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|---|---|
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