MB85R1002

The MB85R1002 is Memory FRAM designed by Fujitsu Media Devices.

Product Overview

Fujitsu Media Devices

Datasheet Details

Part number	MB85R1002
Manufacturer	Fujitsu Media Devices
File Size	175.97 KB
Description	Memory FRAM
Datasheet	MB85R1002_FujitsuMediaDevices.pdf
Additional preview pages of the MB85R1002 datasheet.

Product details

Description

The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Features

Bit configuration : 65,536 words x 16 bits Read/write endurance : 1010 times Operating power supply voltage : 3.0 V to 3.6 V Operating temperature range : -20 °C to +85 °C LB and UB data byte control 48-pin, TSOP(1) plastic package.

📁 Similar Datasheet

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Other Datasheets by Fujitsu Media Devices

MB85R1001 - 1 M Bit (128 K X 8)
MB85R256H - Memory FRAM CMOS 256 K (32 K X 8) Bit
MB81C4251 - 1M-Bit Dual Port CMOS DRAM
MB81C4253 - 1M-Bit Dual Port CMOS DRAM
MB81C4256A - 256K x 4-Bit Fast Page Mode Low Power DRAM
MB81C81A - CMOS 256K-BIT HIGH-SPEED SRAM

Published: Sep 28, 2007 |