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MB85R1002 Datasheet Memory FRAM

Manufacturer: Fujitsu Semiconductor Limited

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General Description

S The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, MB85R1002 is able to retain data without back-up battery.

The memory cells used for the MB85R1002 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance.

Overview

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-1E Memory FRAM CMOS 1 M Bit (64 K×16).

Key Features

  • Bit configuration : 65,536 words x 16 bits Read/write endurance : 1010 times Operating power supply voltage : 3.0 V to 3.6 V Operating temperature range : -20 °C to +85 °C LB and UB data byte control 48-pin, TSOP(1) plastic package.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fujitsu Logo MB85R1002A 1 M Bit (64 K x 16) Fujitsu

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