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MBM29DL16xTD - (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT

General Description

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PROD

Key Features

  • Dual Operation.
  • 0.33 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL.

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Full PDF Text Transcription for MBM29DL16xTD (Reference)

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTD/BD -70/90 s FEATURES Dual Operation • 0.33 µm P...

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× 16) BIT MBM29DL16XTD/BD -70/90 s FEATURES Dual Operation • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP Part No. Ordering Part No. VCC = 3.3 V VCC = 3.0 V +0.3 V

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