MBM29DL322BE - (MBM29DL32xTE/BE) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT
Fujitsu Semiconductor Limited
Download the MBM29DL322BE datasheet PDF.
This datasheet also covers the MBM29DL32xTE variant, as both devices belong to the same (mbm29dl32xte/be) flash memory cmos 32 m (4 m x 8/2 m x 16) bit family and are provided as variant models within a single manufacturer datasheet.
General Description
The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each.
These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.
12.0 V VPP and 5.0 V VCC are not required for write or erase operations.
Key Features
0.23 µm Process Technology.
Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL32XTE/BE Device Bank Divisions” in “s.
Note: The manufacturer provides a single datasheet file (MBM29DL32xTE_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for MBM29DL322BE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MBM29DL322BE. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20881-7E FLASH MEMORY CMOS 32 M (4 M × 8/2 M × 16) BIT Dual Operation MBM29DL32XTE/BE80/90 s DESCRIPTION The MBM...
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M × 16) BIT Dual Operation MBM29DL32XTE/BE80/90 s DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate memory arrays for operations.
MBM29DL322BE Datasheet
