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MBM29DL34BF - (MBM29DL34BF/TF) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT

General Description

The MBM29DL34TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each.

These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.

12.0 V VPP and 5.0 V VCC are not required for write or erase operations.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Pollin.

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Full PDF Text Transcription for MBM29DL34BF (Reference)

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20908-2E FLASH MEMORY CMOS 32 M (4 M × 8/2 M × 16) BIT Dual Operation MBM29DL34TF/BF 70 s DESCRIPTION The MBM29D...

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M × 16) BIT Dual Operation MBM29DL34TF/BF 70 s DESCRIPTION The MBM29DL34TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. Power Supply Voltage (V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DL34TF/BF 70 2.7 V to 3.

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