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MBM29DL34TF - (MBM29DL34BF/TF) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT

Download the MBM29DL34TF datasheet PDF. This datasheet also covers the MBM29DL34BF variant, as both devices belong to the same (mbm29dl34bf/tf) flash memory cmos 32 m (4 m x 8/2 m x 16) bit family and are provided as variant models within a single manufacturer datasheet.

Description

The MBM29DL34TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each.

These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.

12.0 V VPP and 5.0 V VCC are not required for write or erase operations.

Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Pollin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29DL34BF_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MBM29DL321BD-12 32M (4M x 8/2M x 16) BIT Dual Operation Fujitsu
MBM29DL321BD-80 32M (4M x 8/2M x 16) BIT Dual Operation Fujitsu
MBM29DL321BD-90 32M (4M x 8/2M x 16) BIT Dual Operation Fujitsu
MBM29DL321TD-12 32M (4M x 8/2M x 16) BIT Dual Operation Fujitsu
MBM29DL321TD-80 32M (4M x 8/2M x 16) BIT Dual Operation Fujitsu

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29DL34BF (MBM29DL34BF/TF) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT
MBM29DL321BD (MBM29DL32xBD) 32M (4M X 8/2M X 16) BIT Dual Operation
MBM29DL321TD (MBM29DL32xBD) 32M (4M X 8/2M X 16) BIT Dual Operation
MBM29DL322BD (MBM29DL32xBD) 32M (4M X 8/2M X 16) BIT Dual Operation
MBM29DL322BE (MBM29DL32xTE/BE) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT

Full PDF Text Transcription

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20908-2E FLASH MEMORY CMOS 32 M (4 M × 8/2 M × 16) BIT Dual Operation MBM29DL34TF/BF 70 s DESCRIPTION The MBM29DL34TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. Power Supply Voltage (V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DL34TF/BF 70 2.7 V to 3.
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