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GE

D67FP7 Datasheet Preview

D67FP7 Datasheet

NPN POWER TRANSISTORS

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HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D67FP5,6,7
50D-700 VOLTS
100 AMP, 312.5 WATTS
The 067FP is a high voltage NPN high current power
darlington especially designed for use in PWM applications
where fast and efficient switching is required. This device
utilizes GE's latest advances in bipolar technology and
features the 067 Package offering: collector isolation from
heat sink, heft screw terminals for the emitter and collector
and quick-connect terminals for Base 1 and Base 2.
The D67FP also features a discrete fast recovery anti parallel
high power diode which eliminates the need for an external
flyback diode in motor control and other inverter applications
such as power supplies and UPS systems.
Features:
• Fast switching - tf(TVP} 0.6 J.LS
• High blocking voltage - VCEV 500 to 700 Volts
• High current - IC(Peak} 150 Amps
• High gain - hFE(MIN} 50 @ 100 Amps
• Discrete high power fast recovery diode
• Both Base 1 and Base 2 connections are available
• UL recognized industrial package
c
Bl
DEVICE
CIRCUIT
B2
-IOn
E
'NOTE: The
collector-
emitter diode
is a discrete
fast-recovery
high power
diode.
maximum ratings (TC = 250 C) (unless otherwise noted)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @ Tc = 25DC
Derate above 25DC
Operating and Storage
Junction Temperature Range
Isolation Voltage
SYMBOL
VCEV
VCER
VESO
IC
ICM
ICSM
IS
ISM
Po
TJ, TSTG
V'SOL
D67FP5
SOO
400
7
100
1S0
250
10
20
312.S
2.S
-40 to +150
2S00
CASE STYLE D67
DIMENSIONS ARE IN INCHES AND
(MILLIMETERS)
1 - - - - A _ _ _-.j.IT
D67FP6
600
4S0
7
100
150
250
10
20
312.5
2.S
-40 to +150
2500
D67FP7
700
SOO
7
100
150
250
10
20
312.S
2.5
-40 to +1S0
2500
UNITS
Volts
Volts
Volts
A
A
Watts
W/DC
DC
V(rms)
thermal characteristics
Thermal Resistance, (transistor)
(diode)
See page 845 for mounting and handling conSiderations.
.40 .40 .40
1.5 1.5 1.5
559




GE

D67FP7 Datasheet Preview

D67FP7 Datasheet

NPN POWER TRANSISTORS

No Preview Available !

=electrical characteristics (Tc 25° C) (unless otherwise specified)
CHARACTERISTIC
I ISYMBOL MIN
TYP
MAX
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = 1.0A, RBE = 10n)
Collector Cutoff Current
(VCE = Rated VCEV, VBE(off) = 1.5V)
Emitter Cutoff Current
(VEB = 5V, Ic = 0)
D67FP5
D67FP6
D67FP7
TJ = 25°C
TJ = 150°C
VCEO(sus)
ICEV
lEBO
400
450
500
-
-
-
-
-
-
-
-
-
-
-
-
1.0
2.5
10
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE5
on characteristics
DC Current Gain
(Ic = 150A, VCE =5V)
(Ic = 100A, VCE = 5V)
(Ic = 40A, VCE = 5V)
Collector-Emitter Saturation Voltage
(IC = 150A, IB = 10A)
(IC = 100A, IB = 8A)
(IC = 40A, IB = 4A)
Base-Emitter Saturation Voltage
(IC = 150A, IB = 10A)
(IC = 100A, IB = 8A)
-hFE
25 150
50 300 -
100 350
-
VCE(sat)
-
-
-
1.9 3.0
1.3 2.0
0.8 1.5
VBE(sat)
-
-
2.75 3.5
2.3 3.0
switching characteristics
Resistive Load
Delay Time
Rise Time
Storage Time
VCE = 250V
Ic = 100A
IB1 = 5A, -IB2 = 10A
Fall Time
tp = 50 J,tsec
td - 0.1 0.5
tr
-
0.45
1.0
ts - 3.2 5.0
tf - 1.0 3.0
e-c diode characteristics
Forward Voltage
@TJ = 25°C
@TJ = 150°C
Reverse Recovery Time
(IF = 100A, di/dt = 100A/J,tsec, VBE(off) = 1.5V)
(IF = 100A)
Vp
Vp
Trr
-
-
-
1.3 2.0
1.3 2.5
0.5 1.0
UNIT
Volts
mA
mA
-
V
V
J,ts
Volts
Volts
J,tsec
1000
SOO
r-600 TJ=I~
400 ~
«z 0,::
u 20C
...z
aw:
a:
~:u:> 100
~
uc 80
,;, 60
:r.~
40
Vee=2V
20
TYPICAL CHARACTERISTICS
=-~
-~ ~~
I" ~~5OC
.---1000
SOO
~600 TJ=1SO"C
400
«z ~C
... ~I!l 200
z
aw:
a:
~~
~\.\". \
:u:> 100
uc 80
w 60
:r~.
TJ=125'C\
40
TJ=150'C
Vee=5V
20
--~
~~ ~5'C
~T =125"C
)J ) I
T~=1~"t V \
10
10
40 60 80 100
Ie. COLLECTOR CURRENT (AMPERES)
200
FIGURE 1. DC CURRENT GAIN (VCE = 2V), TYPICAL
10
10
20
40 60 SO 100
200
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 2. DC CURRENT GAIN (VCE = SV), TYPICAL
560


Part Number D67FP7
Description NPN POWER TRANSISTORS
Maker GE
Total Page 3 Pages
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