* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84DL2
GE
200.12 KB
Field effect power transistor.
~D~~ FIELD EFFECT POWER TRANSISTOR IRF530,531 D84DL2,K2 14.0 AMPERES 100, 60 VOLTS RDS(ON) = 0.18 n This series of N-Channel Enhancement-mode Power .
📁 Related Datasheet
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D84DQ2 FIELD EFFECT POWER TRANSISTOR (GE)
D84DR1 FIELD EFFECT POWER TRANSISTOR (GE)
D84DR2 FIELD EFFECT POWER TRANSISTOR (GE)
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