* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84DM2
GE
196.92 KB
Field effect power transistor.
~D~~U FIELD EFFECT POWER TRANSISTOR IRF630,631 D84DN2,M2 9.0 AMPERES 200, 150 VOLTS RDS(ON) = 0.4 n This series of N-Channel Enhancement-mode Power .
📁 Related Datasheet
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