* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature o Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
* Excel
D84DQ1
GE
198.29 KB
Field effect power transistor.
~D~[ ~ FIELD EFFECT POWER TRANSISTOR IRF730,731 D84DQ2,Q1 5.5 AMPERES 400, 350 VOLTS RDS(ON) = 1.0 n This series of N-Channel Enhancement-mode P.
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