• Part: D84DQ1
  • Manufacturer: GE
  • Size: 198.29 KB
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D84DQ1 page 2
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D84DQ1 Key Features

  • Polysilicon gate
  • Improved stability and reliability
  • No secondary breakdown
  • Excellent ruggedness
  • Ultra-fast switching
  • Independent of temperature
  • High transconductance
  • Low input capacitance
  • Reduced drive requirement
  • Excellent thermal stability

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D84DQ1 Description

~D~[¥~ FIELD EFFECT POWER TRANSISTOR IRF730,731 D84DQ2,Q1 5.5 AMPERES 400, 350 VOLTS RDS(ON) = 1.0 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters,...