* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84EQ2
GE
197.46 KB
Field effect power transistor.
~~D~[F~u FIELD EFFECT POWER TRANSISTOR IRF740,741 D84EQ2,Q1 10.0 AMPERES 400, 350 VOLTS ROS(ON) =0.55 il This series of N-Channel Enhancement-mode P.
📁 Related Datasheet
D84EQ1 FIELD EFFECT POWER TRANSISTOR (GE)
D84EK2 FIELD EFFECT POWER TRANSISTOR (GE)
D84EL2 FIELD EFFECT POWER TRANSISTOR (GE)
D84EM2 FIELD EFFECT POWER TRANSISTOR (GE)
D84EN2 FIELD EFFECT POWER TRANSISTOR (GE)
D84ER1 FIELD EFFECT POWER TRANSISTOR (GE)
D84ER2 FIELD EFFECT POWER TRANSISTOR (GE)
D8407N Rectifier Diode (Infineon)
D844 2SD844 (SavantIC)
D845 2SD845 (Savant IC)
