* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84ER1
GE
200.23 KB
Field effect power transistor.
~D ~~ FIELD EFFECT POWER TRANSISTOR IRF840,841 D84ER2,R1 SAMPERES 500, 450 VOLTS ROS(ON) = 0.S5 n This series of N-:Channel Enhancement-mode Pow.
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