* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86DQ1
GE
202.10 KB
Field effect power transistor.
~[RjD~~ FIELD EFFECT POWER TRANSISTOR IRF330,331 086002,01 5.5 AMPERES 400, 350 VOLTS ROS(ON) = 1.0!l This series of N-Channel Enhancement-mode Powe.
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