* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86DR1
GE
197.58 KB
Field effect power transistor.
~D~[P~U FIELD EFFECT POWER TRANSISTOR IRF430,431 D86DR2,R1 4.SAMPERES SOO, 4S0 VOLTS ROS(ON) = 1.S!l This series of N-Channel Enhancement-mode Power.
📁 Related Datasheet
D86DR2 FIELD EFFECT POWER TRANSISTOR (GE)
D86DK2 FIELD EFFECT POWER TRANSISTOR (GE)
D86DL2 FIELD EFFECT POWER TRANSISTOR (GE)
D86DM2 FIELD EFFECT POWER TRANSISTOR (GE)
D86DN2 FIELD EFFECT POWER TRANSISTOR (GE)
D86DQ1 FIELD EFFECT POWER TRANSISTOR (GE)
D86DQ2 FIELD EFFECT POWER TRANSISTOR (GE)
D862 2SD862 (Wing Shing Computer Components)
D863 2SD863 (Sanyo Semiconductor Corporation)
D864 2SD864 (Inchange Semiconductor)
