* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance
* -.,. Reduced drive require
D86EK2
GE
204.25 KB
Field effect power transistor.
~ffi1D~~ FIELD EFFECT POWER TRANSISTOR IRF140,141 D86EL2,K2 27 AMPERES 100,60 VOLTS ROS(ON) = 0.085 n This series of N-Channel Enhancement-mode Powe.
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