* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching -Independent of temperature
* Voltage controlled - High transconductance
* Low. input capacitance - Reduced drive requirement
D86EN2
GE
198.35 KB
Field effect power transistor.
~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF2409241 D86EN2,M2 18 AMPERES 200,150 VOLTS RDS(ON) =0.18 .0. This series of N-Channel Enhancement-mode Power.
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