* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86FN2
GE
208.85 KB
Field effect power transistor.
~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF250,251 D86FN2,M2 30 AMPERES 200, 150 VOLTS ROS(ON) =Q.085 0 This series of N-Channel Enhancement-mode Power.
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